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Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance

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Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance

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Model Number : S1337-66BQ S1337-33BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 5000pcs

Delivery Time : 3-5work days

Packaging Details : Paper box

Light-receiving side : 5.8 × 5.8 mm

encapsulation : ceramics

refrigeration : Non-cooled

Reverse voltage (max) : 5 V

Spectral response range : 190 to 1100 nm

Light sensitivity (typical) : 0.5 A/W

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Silicon photodiodes S1337-66BQ

It is suitable for precise photometry in the ultraviolet to infrared band

Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance

Maximum Sensitivity Wavelength (Typical)960 nm
Dark current (max)100 pA
Rise Time (Typical)1 μs
Junction Capacitance (typical)380 pF
Noise equivalent power (typical)1.3×10-14 W/Hz1/2



Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance

Silicon photodiodes S1337-33BQ



It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance

Light-receiving side2.4 × 2.4 mm
encapsulationceramics
refrigerationNon-cooled
Reverse voltage (max)5 V
Spectral response range190 to 1100 nm
Light sensitivity (typical)0.5 A/W


Silicon Photodiodes S1337-66BQ S1337-33BQ Low Capacitance


Product Tags:

Low Capacitance Silicon Photodiodes

      

S1337-66BQ Silicon Photodiodes

      

S1337-33BQ Silicon Photodiodes

      
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